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An interrupt is a flow control mechanism that is implemented on most controllers. In a processor system interacting with the outside world, many things are happening asynchronously, e.g., the user may have pressed a switch for some action to be taken, while a data byte on the serial port may have arrived. It would be quite impossible for the processor to keep track of all the things just by querying these devices for data. Instead, it would be better if these devices could announce arrival of data. This is what the interrupt mechanism does. The peripheral device could interrupt the execution of the main program, and the processor takes time out of the normal program execution to examine the source of the interrupt and to take necessary action. After the required action is taken, the interrupted program execution is resumed. The interrupt program is just like a subroutine, except that the execution of this interrupt subroutine is not anticipated by the processor to occur at a particular moment of time. The AVR has a rich interrupt structure. Interrupt capability has been provided to most of the peripheral devices so that the main program need not poll these devices all the time. The sequence of events when an interrupt occurs is as follows:

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microcleaning step. Black Hole II has been well adapted to conveyorized horizontal equipment and can be followed by pattern or panel electroplating. (See Fig. 30.5.) 30.1.3.2 Graphite. Shadow8 is from Electrochemicals (division of LaPorte Industries, UK) and uses graphite as its conductive medium.The process sequence of Shadow is very simple and involves fewer steps than most DMTs. Electrochemicals and one of their fabricators, Eidschun Engineering, made the breakthrough in inexpensive, compact, conveyorized horizontal equipment, and the Shadow process is well adapted to this mode. It can be followed by pattern or panel electroplating.

Cu foil Prepreg Innerlayer Cu foil Core Pd-colloid absorption (conductor) Prepreg Prepreg Core Prepreg

Stripping of protective polymer (postdip)

Characteristics of representative needle roller bearings [1]

FIGURE 30.4 Principle of Neopact process: (a) conditioning surface; (b) metal cluster in colloidal suspension adhered to the hole wall; (c) stripped Pd adhering to the hole wall; (d) Cu reduced.

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Conductive Polymer Systems 30.1.4.1 DMS-E. DMS-E9 from Blasberg is a second-generation DMS-2 process with which they pioneered in this field. DMS-1 was similar to EE-1. After microetch and conditioning, a potassium permanganate solution forms a manganese dioxide coating in the holes which acts as an oxidizing agent during subsequent synthesis reaction. In the catalyzing step, an EDT* monomer bath wets the manganese dioxide surfaces especially well. During the sulfuric acid fixation step, a spontaneous oxidative polarization takes place, forming a black conductive poly-EDT film on the nonconductive areas of the PCB. This technique is very suitable for use in conveyorized, horizontal equipment, since the oxidative conditioning step is very hot (80 to 90 C), and there are solvents involved. It can be followed by pattern or panel electroplating. (See Fig. 30.6.)

FIGURE 30.5 Principle of carbon/graphite process: (a) conditioning; (b) carbon particles adhered to the surface; (c) dense more conductive carbon conducting film; (d) removal of conduction film from Cu surface resulting in stronger Cu-Cu interface.

1. The peripheral device interrupts the processor. 2. Current instruction execution is completed. 3. The address of the next instruction is stored on the stack (either a hardware stack or a

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30.1.4.2 Compact CP. Compact CP10 was developed by Atotech in 1987 and is essentially similar to DMS-E, except that it combines the catalyzing and fixation steps, it uses an acid permanganate, and the conductive film is a polypyrrole. The technique is very suitable for use in conveyorized, horizontal equipment. It can be followed by pattern or panel electroplating.

Other Methods There are several other novel ways to metallize holes in PCBs, such as Phoenix and EBP from MacDermid, Schl toposit from Schl tter. There are conductive ink and laser scribing/filling techniques; there are sputtering and sequential plating, to name a few, but they do not fall within the scope of this chapter.

Bore size (mm) Minimum Maximum 3 185 Relative load capacity Dynamic Static High Moderate Limiting Misalignment speed tolerance factor 03 Low

FIGURE 30.6 Principle of conductive polymer process: (a) conditioning; (b) monomer created on the surface; (c) oxidant reduces monomer to polymer yielding highly conductive surface; (d) further improved conductive surface.

Comparative Steps of DMT Process 30.1.6.1 DMT.1: Palladium-based Systems. All vertical modes only, for comparison purposes, are shown in Table 30.1. 30.1.6.2 DMT.2: Carbon/Graphite Systems Conveyorized Horizontal. Conveyorized horizontal systems are shown in Table 30.2. 30.1.6.3 DMT.3: Conductive Polymer Systems. Conveyorized, horizontal systems with optional electrolytic flash are shown in Table 30.3.

EE-1 Cleaner conditioner Rinse Microetch Rinse Predip Activator Rinse Accelerator Rinse EE-1 electrolytic flash Rinse Dry

Crimson Cleaner conditioner Rinse Predip Activator Rinse Accelerator Rinse Enhancer Rinse Microetch

12 12

ABC Cleaner conditioner etch Rinse Activator Rinse Salt remover Rinse Dry Microetch Rinse Reactivator

software stack).

Conductron Glass conditioner Rinse Cleaner conditioner Rinse Microetch Rinse Predip Activator Rinse Accelerator

TABLE 30.2 DMT.2 Carbon/graphite systems conveyorized horizontal Black Hole II Cleaner Rinse Black Hole I Dry Rinse Condition Rinse Black Hole II Heated dry Microclean Rinse Antitarnish Rinse Dry Shadow Cleaner conditioner Rinse Shadow bath Heated dry Inspection chamber Microetch Rinse Antitarnish Dry

TABLE 30.3 DMT.3 Conductive polymer systems conveyorized, horizontal, shown with optional electrolytic flash DMS-E Microetch Rinse Conditioner Rinse Oxidative conditioning Rinse Catalyzing Fixation Rinse Acid dip Electrolytic copper Rinse Dry Compact CP Microetch Rinse Cleaner/conditioner Rinse Permanganate Rinse Polyconductor Rinse Soft-etch Rinse Acid dip Electrolytic copper Rinse Dry

100 150

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